Datasheet > IRFP27N60K

IRFP27N60K

更新时间： 2024-11-01 22:11:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	93K
描述
Power MOSFET(Vdss=600V, Rds(on)typ.=180mohm, Id=27A)

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中文翻译

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数据手册

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IRFP27N60K 数据手册

PD - 94407

SMPS MOSFET

IRFP27N60K

HEXFET^®Power MOSFET

Applications

l Hard Switching Primary or PFC Switch

l Switch Mode Power Supply (SMPS)

l Uninterruptible Power Supply

l High Speed Power Switching

l Motor Drive

V_DSS

600V

R_DS(on)typ.

I_D

27A

180mΩ

Benefits

l Low Gate Charge Qg results in Simple

Drive Requirement

l Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche Voltage and Current

l Enhanced Body Diode dv/dt Capability

TO-247AC

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

110

P_D@T_C= 25°C

Power Dissipation

500

W/°C

Linear Derating Factor

4.0

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case )

300

°C

Mounting torqe, 6-32 or M3 screw

10 lbf•in (1.1N•m)

Avalanche Characteristics

Symbol

E_AS

Parameter

Single Pulse Avalanche Energy

Typ.

–––

Max.

530

Units

I_AR

Avalanche Current

E_AR

Repetitive Avalanche Energy

Thermal Resistance

Symbol

Parameter

Junction-to-Case

Typ.

–––

Max.

0.29

–––

Units

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.24

–––

°C/W

www.irf.com

03/20/02

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