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IRFP27N60K PDF预览

IRFP27N60K

更新时间: 2024-09-29 22:11:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 93K
描述
Power MOSFET(Vdss=600V, Rds(on)typ.=180mohm, Id=27A)

IRFP27N60K 数据手册

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PD - 94407  
SMPS MOSFET  
IRFP27N60K  
HEXFET® Power MOSFET  
Applications  
l Hard Switching Primary or PFC Switch  
l Switch Mode Power Supply (SMPS)  
l Uninterruptible Power Supply  
l High Speed Power Switching  
l Motor Drive  
VDSS  
600V  
RDS(on) typ.  
ID  
27A  
180mΩ  
Benefits  
l Low Gate Charge Qg results in Simple  
Drive Requirement  
l Improved Gate, Avalanche and Dynamic  
dv/dt Ruggedness  
l Fully Characterized Capacitance and  
Avalanche Voltage and Current  
l Enhanced Body Diode dv/dt Capability  
TO-247AC  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
27  
18  
110  
A
PD @TC = 25°C  
Power Dissipation  
500  
W
W/°C  
V
Linear Derating Factor  
4.0  
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 30  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
13  
V/ns  
-55 to + 150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case )  
300  
°C  
Mounting torqe, 6-32 or M3 screw  
10 lbf•in (1.1N•m)  
Avalanche Characteristics  
Symbol  
EAS  
Parameter  
Single Pulse Avalanche Energy‚  
Typ.  
–––  
–––  
–––  
Max.  
530  
27  
Units  
mJ  
IAR  
Avalanche Current  
A
EAR  
Repetitive Avalanche Energy  
50  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
0.29  
–––  
40  
Units  
RθJC  
RθCS  
RθJA  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.24  
–––  
°C/W  
www.irf.com  
1
03/20/02  

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