Datasheet > IRFP3206

IRFP3206

更新时间： 2023-12-06 20:07:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	305K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.?

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IRFP3206 数据手册

PD - 97127

IRFP3206PbF

HEXFET^®Power MOSFET

Applications

V_DSS

R_DS(on)typ.

60V

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

2.4m

3.0m

max.

I_D

200A

(Silicon Limited)

120A

(Package Limited)

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

TO-247AC

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Parameter

Max.

200c

140c

120

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current d

840

P_D@T_C= 25°C

280

Maximum Power Dissipation

1.9

Linear Derating Factor

W/°C

V_GS

± 20

Gate-to-Source Voltage

5.0

Peak Diode Recovery f

dv/dt

T_J

V/ns

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

°C

300

Soldering Temperature, for 10 seconds

(1.6mm from case)

10lbxin (1.1Nxm)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy e

E_{AS (Thermally limited)}

170

Avalanche Currentꢀd

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy g

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.54

–––

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case j

Case-to-Sink, Flat Greased Surface

0.24

–––

°C/W

Junction-to-Ambient j

www.irf.com

3/3/08

12 3 4 5 6 7...9

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