Datasheet > IRFP3077

IRFP3077

更新时间： 2024-11-03 11:15:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	307K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

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IRFP3077 数据手册

PD - 97126

IRFP3077PbF

Applications

HEXFET^®Power MOSFET

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

V_DSS

R_DS(on)typ.

75V

2.8m

3.3m

max.

Benefits

l Worldwide Best R_DS(on)in TO-247

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

I_D

200A

(Silicon Limited)

120A

(Package Limited)

l Enhanced body diode dV/dt and dI/dt Capability

TO-247AC

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Parameter

Max.

200c

140c

120

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current d

850

P_D@T_C= 25°C

340

Maximum Power Dissipation

2.3

Linear Derating Factor

W/°C

V_GS

± 20

Gate-to-Source Voltage

2.5

Peak Diode Recovery f

dV/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

300

Soldering Temperature, for 10 seconds

(1.6mm from case)

10lbxin (1.1Nxm)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy e

E_{AS (Thermally limited)}

200

Avalanche Currentꢀc

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy g

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.44

–––

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case j

Case-to-Sink, Flat Greased Surface

0.24

–––

°C/W

Junction-to-Ambient j

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