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IRFP3206PBF PDF预览

IRFP3206PBF

更新时间: 2024-11-24 04:23:19
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
8页 297K
描述
HEXFET Power MOSFET

IRFP3206PBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:LEAD FREE PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:1.1雪崩能效等级(Eas):170 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):200 A
最大漏极电流 (ID):120 A最大漏源导通电阻:0.003 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247AC
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):280 W最大脉冲漏极电流 (IDM):840 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFP3206PBF 数据手册

 浏览型号IRFP3206PBF的Datasheet PDF文件第2页浏览型号IRFP3206PBF的Datasheet PDF文件第3页浏览型号IRFP3206PBF的Datasheet PDF文件第4页浏览型号IRFP3206PBF的Datasheet PDF文件第5页浏览型号IRFP3206PBF的Datasheet PDF文件第6页浏览型号IRFP3206PBF的Datasheet PDF文件第7页 
PD - 97127  
IRFP3206PbF  
HEXFET® Power MOSFET  
Applications  
D
S
VDSS  
RDS(on) typ.  
60V  
l High Efficiency Synchronous Rectification in SMPS  
l Uninterruptible Power Supply  
l High Speed Power Switching  
l Hard Switched and High Frequency Circuits  
2.4m  
3.0m  
:
:
max.  
G
ID  
ID  
200A  
c
(Silicon Limited)  
120A  
(Package Limited)  
Benefits  
l Improved Gate, Avalanche and Dynamic dV/dt  
D
Ruggedness  
l Fully Characterized Capacitance and Avalanche  
SOA  
S
D
l Enhanced body diode dV/dt and dI/dt Capability  
l Lead-Free  
G
TO-247AC  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Symbol  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Parameter  
Max.  
200c  
140c  
120  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)  
Pulsed Drain Current d  
A
840  
PD @TC = 25°C  
280  
Maximum Power Dissipation  
W
1.9  
Linear Derating Factor  
W/°C  
V
VGS  
± 20  
Gate-to-Source Voltage  
5.0  
Peak Diode Recovery f  
dv/dt  
TJ  
V/ns  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
°C  
300  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
10lbxin (1.1Nxm)  
Mounting torque, 6-32 or M3 screw  
Avalanche Characteristics  
Single Pulse Avalanche Energy e  
EAS (Thermally limited)  
170  
mJ  
A
Avalanche Currentꢀd  
IAR  
See Fig. 14, 15, 22a, 22b,  
Repetitive Avalanche Energy g  
EAR  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
0.54  
–––  
40  
Units  
RθJC  
RθCS  
RθJA  
Junction-to-Case j  
Case-to-Sink, Flat Greased Surface  
0.24  
–––  
°C/W  
Junction-to-Ambient j  
www.irf.com  
1
3/3/08  

IRFP3206PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRFP3306PBF INFINEON

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