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IRFP2907

更新时间: 2024-11-19 21:54:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
1页 21K
描述
HEXFET Power MOSFET Die in Wafer Form

IRFP2907 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:LEAD FREE, PLASTIC PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.73
其他特性:AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE雪崩能效等级(Eas):1970 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:75 V最大漏极电流 (ID):90 A
最大漏源导通电阻:0.0045 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247ACJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):840 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFP2907 数据手册

  
PD - 93777  
IRFC2907B  
HEXFET® Power MOSFET Die in Wafer Form  
D
l 100% Tested at Probe  
75V  
RDS(on) = 2.5mΩ  
(typ.)  
l Available in Tape and Reel, Chip Pack,  
Sawn on Film and Gel Pack**  
l Ultra Low On-Resistance  
G
6" Wafer  
S
Electrical Characteristics *  
Parameter  
V(BR)DSS  
RDS(on)***  
VGS(th)  
IDSS  
Description  
Min  
75V  
–––  
2.0  
Typ.  
–––  
Max  
Test Conditions  
Drain-to-Source Breakdown Voltage  
Static Drain-to-Source On-Resistance  
Gate Threshold Voltage  
–––  
VGS = 0V, ID = 250µA  
2.5mΩ  
–––  
4.5mVGS = 10V, ID = 110A  
4.0V  
VDS = VGS, ID = 250µA  
Drain-to-Source Leakage Current  
Gate-to-Source Leakage Current  
Operating Junction and  
–––  
–––  
–––  
20µA  
VDS = 75V, VGS = 0V, TJ = 25°C  
IGSS  
–––  
± 200nA VGS = ±20V  
TJ  
-55°C to 175°C Max.  
TSTG  
Storage Temperature Range  
Mechanical Data  
Nominal Back Metal Composition, Thickness:  
Nominal Front Metal Composition, Thickness:  
Dimensions:  
Cr-NiV-Ag ( 1kA°-2kA°-5kA° )  
100% Al (0.008 mm)  
.257" x .360" [ 6.53 mm x 9.14 mm ]  
150 mm, with 100 flat  
Wafer Diameter:  
Wafer Thickness:  
0.254 mm ± 0.025 mm  
Relevant Die Mechanical Drawing Number  
Minimum Street Width  
01-5403  
0.107 mm  
Reject Ink Dot Size  
0.51 mm Diameter Minimum  
Store in original container, in dessicated  
nitrogen, with no contamination  
For optimum electrical results, die attach  
temperature should not exceed 300 °C  
IRFP2907  
Recommended Storage Environment:  
Recommended Die Attach Conditions:  
Reference Packaged Part  
Die Outline  
NOTES:  
6.53  
[.257]  
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].  
2. CONTROLLING DIMENSION: [INCH].  
3. LETTER DESIGNATION:  
S = SOURCE  
GAT E  
SK = SOURCE KELVIN  
IS = CURRENTSENSE  
E = EMITTER  
G
=
4. DIMENS IONAL T OL ERANCES:  
BONDING PADS:  
WIDT H  
<
<
>
>
0.635 TOLERANCE  
[.0250] TOLERANCE = + /- [.0005]  
0.635 TOLERANCE + /- 0.025  
[.0250] TOLERANCE = + /- [.0010]  
= + /- 0.013  
SOURCE SOURCE  
9.14  
[.360]  
&
=
LENGTH  
OVERALL DIE:  
WIDT H  
<
<
>
>
1.270 TOLERANCE  
[.050] TOLERANCE = + /- [.004]  
1.270 TOLERANCE + /- 0.203  
[.050] TOLERANCE = + /- [.008]  
= + /- 0.102  
GAT E  
&
=
LENGTH  
0.508  
[.020]  
0.508  
[.020]  
5. UNLESS OTHERWISE NOTED ALL DIE ARE GEN III  
*
Electrical characteristics are reported for the reference packaged part (see above) and can not be guaranteed in  
die sales form. Variations in customer packaging materials, dimensions and processes may affect parametric performance.  
** Contact factory for these product forms.  
***The typical RDS(on) is an estimated value for the bare die, actual results will depend on customer packaging materials and  
dimensions.  
www.irf.com  
1
10/4/00  

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