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AUIRFP2907

更新时间： 2024-02-11 17:53:54
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 231K
描述
Power Field-Effect Transistor, 90A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, PLASTIC PACKAGE-3

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AUIRFP2907 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：TO-247AC
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.17Is Samacsys：N
其他特性：AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE雪崩能效等级（Eas）：690 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：75 V最大漏极电流 (Abs) (ID)：170 A
最大漏极电流 (ID)：170 A最大漏源导通电阻：0.0045 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-247AC
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：250极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：310 W最大脉冲漏极电流 (IDM)：680 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子面层：MATTE TIN OVER NICKEL
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRFP2907 数据手册

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PD -97692A  
AUTOMOTIVE GRADE  
AUIRFP2907  
HEXFET® Power MOSFET  
Features  
l Advanced Planar Technology  
l Low On-Resistance  
D
S
V(BR)DSS  
75V  
RDS(on) typ.  
max  
ID (Silicon Limited)  
3.6m  
4.5m  
209A  
Ω
Ω
l Dynamic dV/dT Rating  
l 175°C Operating Temperature  
l Fast Switching  
l Fully Avalanche Rated  
l Repetitive Avalanche Allowed  
up to Tjmax  
G
ID (Package Limited)  
90A  
l Lead-Free, RoHS Compliant  
l Automotive Qualified*  
D
Description  
Specifically designed for Automotive applications, this  
Stripe Planar design of HEXFET® Power MOSFETs  
utilizes the latest processing techniques to achieve  
low on-resistance per silicon area. This benefit  
combinedwiththefastswitchingspeedandruggedized  
device design that HEXFET power MOSFETs are well  
known for, provides the designer with an extremely  
efficient and reliable device for use in Automotive and  
a wide variety of other applications.  
S
D
G
TO-247AC  
AUIRFP2907  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the  
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
209  
148  
90  
Parameter  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
@ T = 25°C  
C
I
I
I
I
D
D
D
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
A
@ T = 100°C  
C
@ T = 25°C  
C
840  
DM  
470  
P
@T = 25°C Power Dissipation  
W
W/°C  
V
D
C
3.1  
Linear Derating Factor  
± 20  
1970  
V
Gate-to-Source Voltage  
GS  
EAS  
IAR  
Single Pulse Avalanche Energy (Thermally Limited)  
mJ  
See Fig. 12a, 12b, 15, 16  
Avalanche Current  
A
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Operating Junction and  
mJ  
5.0  
V/ns  
-55 to + 175  
T
T
J
Storage Temperature Range  
°C  
STG  
300  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Mounting Torque, 6-32 or M3 screw  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.32  
–––  
40  
Units  
RθJC  
RθCS  
RθJA  
Junction-to-Case  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.24  
–––  
°C/W  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
08/11/11  
1234567...12

中文翻译

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AUIRFP2907 替代型号

型号 品牌 替代类型 描述 数据表
IRFP2907PBF INFINEON

类似代替

 AUTOMOTIVE MOSFET (VDSS = 75V , RDS(on) = 4.5
IRFP2907ZPBF INFINEON

类似代替

 HEXFET Power MOSFET
IRFP2907 INFINEON

功能相似

 HEXFET Power MOSFET Die in Wafer Form

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