IRFP2907HR

更新时间： 2024-11-24 13:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
1页	21K
描述
Power Field-Effect Transistor, 90A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, PLASTIC PACKAGE-3

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IRFP2907HR 数据手册

PD - 93777

IRFC2907B

HEXFET^®Power MOSFET Die in Wafer Form

l 100% Tested at Probe

75V

R_DS(on)= 2.5mΩ

(typ.)

l Available in Tape and Reel, Chip Pack,

Sawn on Film and Gel Pack**

l Ultra Low On-Resistance

6" Wafer

Electrical Characteristics *

Parameter

V_(BR)DSS

R_DS(on)***

V_GS(th)

I_DSS

Description

Min

75V

–––

2.0

Typ.

–––

Max

Test Conditions

Drain-to-Source Breakdown Voltage

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

–––

V_GS= 0V, I_D= 250µA

2.5mΩ

–––

4.5mΩ V_GS= 10V, I_D= 110A

4.0V

V_DS= V_GS, I_D= 250µA

Drain-to-Source Leakage Current

Gate-to-Source Leakage Current

Operating Junction and

–––

20µA

V_DS= 75V, V_GS= 0V, T_J= 25°C

I_GSS

–––

± 200nA V_GS= ±20V

T_J

-55°C to 175°C Max.

T_STG

Storage Temperature Range

Mechanical Data

Nominal Back Metal Composition, Thickness:

Nominal Front Metal Composition, Thickness:

Dimensions:

Cr-NiV-Ag ( 1kA°-2kA°-5kA° )

100% Al (0.008 mm)

.257" x .360" [ 6.53 mm x 9.14 mm ]

150 mm, with 100 flat

Wafer Diameter:

Wafer Thickness:

0.254 mm ± 0.025 mm

Relevant Die Mechanical Drawing Number

Minimum Street Width

01-5403

0.107 mm

Reject Ink Dot Size

0.51 mm Diameter Minimum

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300 °C

IRFP2907

Recommended Storage Environment:

Recommended Die Attach Conditions:

Reference Packaged Part

Die Outline

NOTES:

6.53

[.257]

1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

2. CONTROLLING DIMENSION: [INCH].

3. LETTER DESIGNATION:

S = SOURCE

GAT E

SK = SOURCE KELVIN

IS = CURRENTSENSE

E = EMITTER

4. DIMENS IONAL T OL ERANCES:

BONDING PADS:

WIDT H

0.635 TOLERANCE

[.0250] TOLERANCE = + /- [.0005]

0.635 TOLERANCE + /- 0.025

[.0250] TOLERANCE = + /- [.0010]

= + /- 0.013

SOURCE SOURCE

9.14

[.360]

LENGTH

OVERALL DIE:

WIDT H

1.270 TOLERANCE

[.050] TOLERANCE = + /- [.004]

1.270 TOLERANCE + /- 0.203

[.050] TOLERANCE = + /- [.008]

= + /- 0.102

GAT E

LENGTH

0.508

[.020]

0.508

[.020]

5. UNLESS OTHERWISE NOTED ALL DIE ARE GEN III

Electrical characteristics are reported for the reference packaged part (see above) and can not be guaranteed in

die sales form. Variations in customer packaging materials, dimensions and processes may affect parametric performance.

** Contact factory for these product forms.

***The typical R_DS(on)is an estimated value for the bare die, actual results will depend on customer packaging materials and

dimensions.

www.irf.com

10/4/00

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