IRFP26N60L

更新时间： 2024-11-01 22:11:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体开关晶体管功率场效应晶体管脉冲局域网
页数	文件大小	规格书
9页	199K
描述
SMPS MOSFET

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中文翻译

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数据手册

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IRFP26N60L 数据手册

PD - 94611A

SMPS MOSFET

IRFP26N60L

HEXFET^®Power MOSFET

Applications

• Zero Voltage Switching SMPS

Trr typ.

V_DSSR_DS(on)typ.

600V

I_D

• Telecom and Server Power Supplies

• Uninterruptible Power Supplies

• Motor Control applications

170ns 26A

210m

Ω

Features and Benefits

• SuperFast body diode eliminates the need for external

diodes in ZVS applications.

• Lower Gate charge results in simpler drive requirements.

• Enhanced dv/dt capabilities offer improved ruggedness.

• Higher Gate voltage threshold offers improved noise immunity.

TO-247AC

Absolute Maximum Ratings

Parameter

Continuous Drain Current, V_GS@ 10V

Max.

Units

I @ T = 25°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

I @ T = 100°C

100

470

P @T = 25°C

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

3.8

±30

W/°C

Peak Diode Recovery dv/dt

Operating Junction and

dv/dt

V/ns

-55 to + 150

Storage Temperature Range

°C

STG

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

300 (1.6mm from case )

1.1(10)

N•m (lbf•in)

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

––– ––– 26

MOSFET symbol

(Body Diode)

Pulsed Source Current

showing the

integral reverse

––– ––– 100

(Body Diode)

p-n junction diode.

T = 25°C, I = 26A, V = 0V

J S GS

Diode Forward Voltage

Reverse Recovery Time

––– ––– 1.5

T = 25°C, I = 26A

J F

––– 170 250 ns

––– 210 320

T_J= 125°C, di/dt = 100A/µs

T = 25°C, I = 26A, V = 0V

Reverse Recovery Charge

––– 670 1000 nC

––– 1050 1570

T_J= 125°C, di/dt = 100A/µs

I_RRM

T = 25°C

Reverse Recovery Current

Forward Turn-On Time

––– 7.3

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

www.irf.com

10/19/04

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