IRFP27N60K, SiHFP27N60K
Vishay Siliconix
Power MOSFET
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
PRODUCT SUMMARY
VDS (V)
600
Available
R
DS(on) (Ω)
VGS = 10 V
0.18
RoHS*
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Qg (Max.) (nC)
180
56
COMPLIANT
Q
Q
gs (nC)
gd (nC)
• Fully Characterized Capacitance and Avalanche Voltage
and Current
86
Configuration
Single
• Enhanced Body Diode dV/dt Capability
• Lead (Pb)-free Available
D
TO-247
APPLICATIONS
• Hard Switching Primary or PFC Switch
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• Motor Drive
G
S
D
S
N-Channel MOSFET
G
ORDERING INFORMATION
Package
TO-247
IRFP27N60KPbF
SiHFP27N60K-E3
IRFP27N60K
Lead (Pb)-free
SnPb
SiHFP27N60K
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
600
30
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
TC = 25 °C
TC =100°C
27
Continuous Drain Current
VGS at 10 V
ID
18
A
Pulsed Drain Currenta
IDM
110
Linear Derating Factor
4.0
W/°C
mJ
A
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
530
27
EAR
50
mJ
W
Maximum Power Dissipation
TC = 25 °C
PD
500
Peak Diode Recovery dV/dtc
dV/dt
TJ, Tstg
13
- 55 to + 150
300d
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
°C
for 10 s
10
lbf · in
N · m
Mounting Torque
6-32 or M3 screw
1.1
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 1.4 mH, RG = 25 Ω, IAS = 27 A, dV/dt = 13 V/ns (see fig. 12).
c. ISD ≤ 27 A, dI/dt ≤ 390 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91219
S-Pending-Rev. B, 12-Jun-08
www.vishay.com
1
WORK-IN-PROGRESS