IRFP264N, SiHFP264N
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Advanced Process Technology
250
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Ease of Paralleling
Available
R
DS(on) (Ω)
VGS = 10 V
0.060
RoHS*
Qg (Max.) (nC)
210
34
COMPLIANT
Q
Q
gs (nC)
gd (nC)
94
Configuration
Single
• Simple Drive Requirements
• Lead (Pb)-free Available
D
TO-247
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well know for, provides the designer
with an ectremely efficient and reliable device for use in a
wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
G
S
D
S
N-Channel MOSFET
G
ORDERING INFORMATION
Package
TO-247
IRFP264NPbF
SiHFP264N-E3
IRFP264N
Lead (Pb)-free
SnPb
SiHFP264N
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
250
V
VGS
20
TC = 25 °C
TC =100°C
44
31
Continuous Drain Current
VGS at 10 V
ID
A
Pulsed Drain Currenta
IDM
170
Linear Derating Factor
2.6
W/°C
mJ
A
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
520
25
EAR
38
mJ
W
Maximum Power Dissipation
T
C = 25 °C
PD
380
Peak Diode Recovery dV/dtc
dV/dt
TJ, Tstg
8.7
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
- 55 to + 175
300d
10
°C
for 10 s
6-32 or M3 screw
lbf · in
N · m
Mounting Torque
1.1
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 1.7 mH, RG = 25 Ω, IAS = 25 A, VGS = 10 V (see fig. 12).
c. ISD ≤ 25 A, dI/dt ≤ 500 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91216
S-81274-Rev. A, 16-Jun-08
www.vishay.com
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