IRFP264NPBF

更新时间： 2024-11-20 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	151K
描述
Power MOSFET

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IRFP264NPBF 数据手册

IRFP264N, SiHFP264N

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Advanced Process Technology

250

• Dynamic dV/dt Rating

• 175 °C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

• Ease of Paralleling

Available

_DS(on)(Ω)

V_GS= 10 V

0.060

RoHS*

Q_g(Max.) (nC)

210

COMPLIANT

_gs(nC)

_gd(nC)

Configuration

Single

• Simple Drive Requirements

• Lead (Pb)-free Available

TO-247

DESCRIPTION

Fifth generation Power MOSFETs from Vishay utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well know for, provides the designer

with an ectremely efficient and reliable device for use in a

wide variety of applications.

The TO-247 package is preferred for commercial-industrial

applications where higher power levels preclude the use of

TO-220 devices. The TO-247 is similar but superior to the

earlier TO-218 package because of its isolated mounting

hole.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-247

IRFP264NPbF

SiHFP264N-E3

IRFP264N

Lead (Pb)-free

SnPb

SiHFP264N

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

250

V_GS

T_C= 25 °C

T_C=100°C

Continuous Drain Current

V_GSat 10 V

I_D

Pulsed Drain Current^a

I_DM

170

Linear Derating Factor

2.6

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

520

E_AR

Maximum Power Dissipation

_C= 25 °C

P_D

380

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

8.7

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 175

300^d

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T_J= 25 °C, L = 1.7 mH, R_G= 25 Ω, I_AS= 25 A, V_GS= 10 V (see fig. 12).

c. I_SD≤ 25 A, dI/dt ≤ 500 A/µs, V_DD≤ V_DS, T_J≤ 175 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91216

S-81274-Rev. A, 16-Jun-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

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IRFP264NPBF 替代型号

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