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IRFP260MPBF PDF预览

IRFP260MPBF

更新时间: 2024-11-20 12:01:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
8页 641K
描述
HEXFET® Power MOSFET

IRFP260MPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:1.04Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:610119
Samacsys Pin Count:3Samacsys Part Category:MOSFET (N-Channel)
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-247AC_3
Samacsys Released Date:2018-09-22 09:06:47Is Samacsys:N
其他特性:AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE雪崩能效等级(Eas):560 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):50 A最大漏极电流 (ID):50 A
最大漏源导通电阻:0.04 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247ACJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):250极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):300 W最大脉冲漏极电流 (IDM):200 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:MATTE TIN OVER NICKEL
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFP260MPBF 数据手册

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PD - 96293  
IRFP260MPbF  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Dynamic dv/dt Rating  
l 175°C Operating Temperature  
l Fast Switching  
l Fully Avalanche Rated  
l Ease of Paralleling  
D
VDSS = 200V  
RDS(on) = 0.04Ω  
G
ID = 50A  
l Simple Drive Requirements  
l Lead-Free  
S
Description  
FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessing  
techniques to achieve extremely low on-resistance per silicon area. This benefit,  
combined with the fast switching speed and ruggedized device design that  
HEXFET Power MOSFETs are well known for, provides the designer with an  
extremely efficient and reliable device for use in a wide variety of applications.  
The TO-247 package is preferred for commercial-industrial applications where  
higher power levels preclude the use of TO-220 devices. The TO-247 is similar  
but superior tothe earlier TO-218 package because ofits isolated mounting hole.  
TO-247AC  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
50  
35  
A
200  
PD @TC = 25°C  
Power Dissipation  
300  
W
W/°C  
V
Linear Derating Factor  
2.0  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
±20  
Single Pulse Avalanche Energy‚  
Avalanche Current  
560  
mJ  
A
50  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
30  
mJ  
V/ns  
10  
-55 to +175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 srew  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
Units  
RθJC  
RθCS  
RθJA  
0.50  
–––  
40  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.24  
–––  
°C/W  
www.irf.com  
1
03/01/10  

IRFP260MPBF 替代型号

型号 品牌 替代类型 描述 数据表
PSMN040-200W,127 NXP

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PSMN040-200W - N-channel TrenchMOS SiliconMAX standard level FET@en-us TO-247 3-Pin

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