IRFP260PBF

更新时间： 2024-09-28 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	541K
描述
Power MOSFET

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IRFP260PBF 数据手册

IRFP260, SiHFP260

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

200

Available

• Repetitive Avalanche Rated

• Isolated Central Mounting Hole

• Fast Switching

_DS(on)(Ω)

V_GS= 10 V

0.055

RoHS*

Q_g(Max.) (nC)

230

COMPLIANT

_gs(nC)

_gd(nC)

• Ease of Paralleling

110

• Simple Drive Requirements

• Lead (Pb)-free Available

Configuration

Single

TO-247

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-247 package is preferred for commercial-industrial

applications where higher power levels preclude the use of

TO-220 devices. The TO-247 is similar but superior to the

earlier TO-218 package because of its isolated mouting hole.

It also provides greater creepage distance between pins to

meet the requirements of most safety specifications.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-247

IRFP260PbF

SiHFP260-E3

IRFP260

Lead (Pb)-free

SnPb

SiHFP260

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

200

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

Continuous Drain Current

V_GSat 10 V

I_D

T_C=100°C

Pulsed Drain Current^a

I_DM

180

Linear Derating Factor

2.2

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

1000

E_AR

Maximum Power Dissipation

T_C= 25 °C

P_D

280

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

5.0

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 708 µH, R_G= 25 Ω, I_AS= 46 A (see fig. 12).

c. I_SD≤ 46 A, dI/dt ≤ 230 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91215

S-81304-Rev. A, 16-Jun-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

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IRFP260PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFP260NPBF	INFINEON	功能相似	HEXFET Power MOSFET
STW40NF20	STMICROELECTRONICS	功能相似	N-channel 200V - 0.038ヘ -40A- D2PAK/TO-220/TO

与IRFP260PBF相关器件

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IRFP264	IXYS	获取价格	Standard Power MOSFET - N-Channel Enhancement Mode
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IRFP264NPBF	VISHAY	获取价格	Power MOSFET
IRFP264PBF	INFINEON	获取价格	HEXFET Power MOSFET
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