IRFP254PBF

更新时间： 2024-11-24 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	1371K
描述
Power MOSFET

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中文翻译

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IRFP254PBF 数据手册

IRFP254, SiHFP254

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

250

Available

• Repetitive Avalanche Rated

• Isolated Central Mounting Hole

• Fast Switching

_DS(on)(Ω)

V_GS= 10 V

0.14

RoHS*

Q_g(Max.) (nC)

140

COMPLIANT

_gs(nC)

_gd(nC)

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

Configuration

Single

TO-247

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-247 package is preferred for commercial-industrial

applications where higher power levels preclude the use of

TO-220 devices. The TO-247 is similar but superior to the

earlier TO-218 package because of its isolated mouting hole.

It also provides greater creepage distance between pins to

meet the requirements of most safety specifications.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-247

IRFP254PbF

SiHFP254-E3

IRFP254

Lead (Pb)-free

SnPb

SiHFP254

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

250

V_GS

T_C= 25 °C

T_C=100°C

Continuous Drain Current

_GSat 10 V

I_D

Pulsed Drain Current^a

I_DM

Linear Derating Factor

1.5

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

410

E_AR

190

Maximum Power Dissipation

T_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

4.8

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 1.2 mH, R_G= 25 Ω, I_AS= 23 A (see fig. 12).

c. I_SD≤ 23 A, dI/dt ≤ 180 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91214

S-81304-Rev. A, 16-Jun-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

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IRFP254PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFP254PBF	VISHAY	功能相似	Power MOSFET

与IRFP254PBF相关器件

型号	品牌	获取价格	描述	数据表
IRFP254R	RENESAS	获取价格	IRFP254R
IRFP255	SAMSUNG	获取价格	Power Field-Effect Transistor, 21A I(D), 250V, 0.17ohm, 1-Element, N-Channel, Silicon, Met
IRFP255R	RENESAS	获取价格	IRFP255R
IRFP256	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 275V V(BR)DSS \| 23A I(D) \| TO-247
IRFP257	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 275V V(BR)DSS \| 21A I(D) \| TO-247
IRFP260	VISHAY	获取价格	Power MOSFET
IRFP260	IXYS	获取价格	Standard Power MOSFET - N-Channel Enhancement Mode
IRFP260	INFINEON	获取价格	Power MOSFET(Vdss=200V, Rds(on)=0.04ohm, Id=50A)
IRFP260M	INFINEON	获取价格	The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers
IRFP260MPBF	INFINEON	获取价格	HEXFETÂ® Power MOSFET

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