IRFP254N

更新时间： 2024-02-09 05:49:18

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	159K
描述
Power MOSFET

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中文翻译

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技术参数
数据手册

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IRFP254N 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	not_compliant	风险等级：	5.88
配置：	Single	最大漏极电流 (Abs) (ID)：	23 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e0
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	180 W
子类别：	FET General Purpose Power	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

IRFP254N 数据手册

IRFP254N, SiHFP254N

Vishay Siliconix

Power MOSFET

FEATURES

• Advanced Process Technology

PRODUCT SUMMARY

V_DS(V)

250

• Dynamic dV/dt Rating

• 175 °C Operating Temperature

• Fully Avalanche Rated

• Fast Switching

Available

R_DS(on)(Ω)

V_GS= 10 V

0.125

RoHS*

COMPLIANT

Q_g(Max.) (nC)

100

_gs(nC)

_gd(nC)

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

Configuration

Single

DESCRIPTION

TO-247

Fifth generation Power MOSFETs from Vishay utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

these Power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device for

use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial

applications where higher power levels preclude the use of

TO-220 devices. The TO-247 is similar but superior to the

earlier TO-218 package because of its isolated mounting

hole.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-247

IRFP254NPbF

SiHFP254N-E3

IRFP254N

Lead (Pb)-free

SnPb

SiHFP254N

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

250

V_GS

_C= 25 °C

Continuous Drain Current

V_GSat 10 V

I_D

T_C=100°C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

1.5

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

300

E_AR

220

Maximum Power Dissipation

T_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

7.4

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 175

300^d

°C

for 10 s

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T_J= 25 °C, L = 3.1 mH, R_G= 25 Ω, I_AS= 14 A, V_GS= 10 V.

c. I_SD≤ 14 A, dI/dt ≤ 460 A/µs, V_DD≤ V_DS, T_J≤ 175 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91213

S-Pending-Rev. A, 24-Jun-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

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与IRFP254N相关器件

型号	品牌	获取价格	描述	数据表
IRFP254NPBF	VISHAY	获取价格	Power MOSFET
IRFP254NPBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRFP254PBF	VISHAY	获取价格	Power MOSFET
IRFP254R	RENESAS	获取价格	IRFP254R
IRFP255	SAMSUNG	获取价格	Power Field-Effect Transistor, 21A I(D), 250V, 0.17ohm, 1-Element, N-Channel, Silicon, Met
IRFP255R	RENESAS	获取价格	IRFP255R
IRFP256	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 275V V(BR)DSS \| 23A I(D) \| TO-247
IRFP257	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 275V V(BR)DSS \| 21A I(D) \| TO-247
IRFP260	VISHAY	获取价格	Power MOSFET
IRFP260	IXYS	获取价格	Standard Power MOSFET - N-Channel Enhancement Mode

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