IRFP254N

更新时间： 2024-10-31 22:51:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	222K
描述
Power MOSFET(Vdss=250V, Rds(on)=125mohm, Id=23A)

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IRFP254N 数据手册

PD - 94213

IRFP254N

HEXFET^®Power MOSFET

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Ease of Paralleling

V_DSS= 250V

R_DS(on)= 125mΩ

I_D= 23A

l Simple Drive Requirements

Description

FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessing

techniques to achieve extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized device design that

HEXFET Power MOSFETs are well known for, provides the designer with an

extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where

higher power levels preclude the use of TO-220 devices. The TO-247 is similar

but superior to the earlier TO-218 package because of its isolated mounting hole.

TO-247AC

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

220

W/°C

Linear Derating Factor

1.5

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy

Avalanche Current

300

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

7.4

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

0.68

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.24

–––

°C/W

www.irf.com

7/20/01

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