是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.81 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 33 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 180 W | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFP251R | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 33A I(D) | TO-247 | |
IRFP252 | SAMSUNG |
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N-Channel Power Mosfets | |
IRFP252 | IXYS |
获取价格 |
High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series | |
IRFP252 | INFINEON |
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N-Channel(Hexfet Transistors) | |
IRFP252R | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 27A I(D) | TO-247 | |
IRFP253 | SAMSUNG |
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N-Channel Power Mosfets | |
IRFP253 | IXYS |
获取价格 |
High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series | |
IRFP253 | INFINEON |
获取价格 |
N-Channel(Hexfet Transistors) | |
IRFP253R | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 27A I(D) | TO-247 | |
IRFP254 | INFINEON |
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Power MOSFET(Vdss = 250 V, Rds(on)=0.14ohm, Id=23A) |