型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFP253 | SAMSUNG |
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N-Channel Power Mosfets | |
IRFP253 | IXYS |
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High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series | |
IRFP253 | INFINEON |
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N-Channel(Hexfet Transistors) | |
IRFP253R | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 27A I(D) | TO-247 | |
IRFP254 | INFINEON |
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Power MOSFET(Vdss = 250 V, Rds(on)=0.14ohm, Id=23A) | |
IRFP254 | IXYS |
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Standard Power MOSFET - N-Channel Enhancement Mode | |
IRFP254 | VISHAY |
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Power MOSFET | |
IRFP254 | NJSEMI |
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Trans MOSFET N-CH 250V 23A 3-Pin(3+Tab) TO-247AC | |
IRFP254A | INFINEON |
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$GYDQFHG 3RZHU 026)(7 | |
IRFP254B | FAIRCHILD |
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250V N-Channel MOSFET |