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IRFP4668PBF PDF预览

IRFP4668PBF

更新时间: 2024-11-20 05:39:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
8页 288K
描述
HEXFET Power MOSFET

IRFP4668PBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:LEAD FREE PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:1.07雪崩能效等级(Eas):760 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):130 A
最大漏极电流 (ID):130 A最大漏源导通电阻:0.0097 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247AC
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):250
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):520 W
最大脉冲漏极电流 (IDM):520 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:MATTE TIN OVER NICKEL端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFP4668PBF 数据手册

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PD -97140  
IRFP4668PbF  
HEXFET® Power MOSFET  
Applications  
D
VDSS  
200V  
l High Efficiency Synchronous Rectification in SMPS  
l Uninterruptible Power Supply  
l High Speed Power Switching  
l Hard Switched and High Frequency Circuits  
RDS(on) typ.  
8.0m  
9.7m  
:
G
max.  
:
ID  
130A  
S
Benefits  
l Improved Gate, Avalanche and Dynamic dV/dt  
Ruggedness  
D
l Fully Characterized Capacitance and Avalanche  
SOA  
l Enhanced body diode dV/dt and dI/dt Capability  
l Lead-Free  
S
D
G
TO-247AC  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Symbol  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current c  
Max.  
130  
Units  
92  
A
520  
PD @TC = 25°C  
520  
Maximum Power Dissipation  
Linear Derating Factor  
W
3.5  
W/°C  
V
VGS  
± 30  
Gate-to-Source Voltage  
57  
Peak Diode Recovery e  
dv/dt  
TJ  
V/ns  
°C  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
300  
10lbxin (1.1Nxm)  
Mounting torque, 6-32 or M3 screw  
Avalanche Characteristics  
Single Pulse Avalanche Energy d  
EAS (Thermally limited)  
760  
mJ  
A
Avalanche Current c  
IAR  
See Fig. 14, 15, 22a, 22b,  
Repetitive Avalanche Energy f  
EAR  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
0.29  
–––  
40  
Units  
RθJC  
Junction-to-Case j  
RθCS  
Case-to-Sink, Flat Greased Surface  
0.24  
–––  
°C/W  
RθJA  
Junction-to-Ambient ij  
www.irf.com  
1
9/8/08  

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