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IRFP4227PBF PDF预览

IRFP4227PBF

更新时间: 2024-11-24 04:23:23
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体开关晶体管脉冲光电二极管PC局域网
页数 文件大小 规格书
8页 301K
描述
PDP SWITCH

IRFP4227PBF 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:LEAD FREE PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:1.12Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:906892
Samacsys Pin Count:3Samacsys Part Category:MOSFET (N-Channel)
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:to-247ac
Samacsys Released Date:2019-07-21 22:22:01Is Samacsys:N
其他特性:FAST SWITCHING雪崩能效等级(Eas):140 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):65 A
最大漏极电流 (ID):65 A最大漏源导通电阻:0.025 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247AC
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):330 W最大脉冲漏极电流 (IDM):260 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFP4227PBF 数据手册

 浏览型号IRFP4227PBF的Datasheet PDF文件第2页浏览型号IRFP4227PBF的Datasheet PDF文件第3页浏览型号IRFP4227PBF的Datasheet PDF文件第4页浏览型号IRFP4227PBF的Datasheet PDF文件第5页浏览型号IRFP4227PBF的Datasheet PDF文件第6页浏览型号IRFP4227PBF的Datasheet PDF文件第7页 
PD - 97070  
IRFP4227PbF  
PDP SWITCH  
Features  
Key Parameters  
l
Advanced Process Technology  
VDS max  
200  
240  
21  
V
V
l
Key Parameters Optimized for PDP Sustain,  
Energy Recovery and Pass Switch Applications  
Low EPULSE Rating to Reduce Power  
Dissipation in PDP Sustain, Energy Recovery  
and Pass Switch Applications  
VDS (Avalanche) typ.  
RDS(ON) typ. @ 10V  
IRP max @ TC= 100°C  
TJ max  
l
m:  
130  
175  
A
°C  
l
l
Low QG for Fast Response  
High Repetitive Peak Current Capability for  
Reliable Operation  
D
D
l
Short Fall & Rise Times for Fast Switching  
175°C Operating Junction Temperature for  
Improved Ruggedness  
l
S
D
G
G
l
Repetitive Avalanche Capability for Robustness  
and Reliability  
S
TO-247AC  
G
D
S
Gate  
Drain  
Source  
Description  
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch  
applicationsinPlasmaDisplayPanels. ThisMOSFETutilizesthelatestprocessingtechniquestoachieve  
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C  
operating junction temperature and high repetitive peak current capability. These features combine to  
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.  
Absolute Maximum Ratings  
Max.  
±30  
Parameter  
Gate-to-Source Voltage  
Units  
VGS  
V
A
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
65  
46  
260  
IRP @ TC = 100°C  
PD @TC = 25°C  
PD @TC = 100°C  
130  
Repetitive Peak Current  
330  
Power Dissipation  
W
190  
Power Dissipation  
2.2  
Linear Derating Factor  
W/°C  
°C  
TJ  
-40 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature for 10 seconds  
Mounting Torque, 6-32 or M3 Screw  
300  
10lb in (1.1N m)  
N
Thermal Resistance  
Parameter  
Typ.  
Max.  
0.45  
–––  
62  
Units  
Junction-to-Case  
RθJC  
RθCS  
RθJA  
–––  
0.50  
–––  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
°C/W  
Notes  through †are on page 8  
www.irf.com  
1
2/6/06  

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