Datasheet > IRF7807D2TRPBF

IRF7807D2TRPBF

更新时间： 2024-11-20 21:20:15

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲光电二极管晶体管
页数	文件大小	规格书
8页	100K
描述
Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

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IRF7807D2TRPBF 数据手册

PD- 93762

IRF7807D2

FETKY™ MOSFET / SCHOTTKY DIODE

• Co-Pack N-channel HEXFET Power MOSFET

and Schottky Diode

• Ideal for Synchronous Rectifiers in DC-DC

Converters up to 5A Output

• Low Conduction Losses

• Low Switching Losses

K/D

A/S

K/D

• Low Vf Schottky Rectifier

SO-8

Top View

Description

The FETKY^™family of Co-Pack HEXFET MOSFETs

and Schottky diodes offers the designer an innovative,

board space saving solution for switching regulator and

power management applications. HEXFET power

MOSFETs utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area.

Combining this technology with International Rectifier’s

low forward drop Schottky rectifiers results in an extremely

efficient device suitable for use in a wide variety of

portable electronics applications.

Device Features (Max Values)

IRF7807D2

V_DS

30V

R_DS(on)

Q_g

25mΩ

14nC

Q_SW

Q_oss

5.2nC

21.6nC

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics.The SO-

8 package is designed for vapor phase, infrared or wave

soldering techniques.

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Max.

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain or Source

Current (V_GS≥ 4.5V)

Pulsed Drain Current

Power Dissipation

±12

V_GS

25°C

70°C

I_D

8.3

6.6

I_DM

P_D

25°C

70°C

25°C

70°C

2.5

1.6

Schottky and Body Diode

I_F(AV)

T_J,T_STG

3.7

Average ForwardCurrent

2.3

Junction & Storage Temperature Range

–55 to 150

°C

Thermal Resistance

Parameter

Max.

Units

Maximum Junction-to-Ambient

R_θJA

°C/W

www.irf.com

11/8/99

12 3 4 5 6 7 8

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IRF7807D2TRPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRF7807D2PBF	INFINEON	类似代替	FETKY⑩ MOSFET / SCHOTTKY DIODE

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IRF7807TRPBF-1	INFINEON	获取价格	Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Me
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