Datasheet > IRF7807VD1TRPBF-1

IRF7807VD1TRPBF-1

更新时间： 2024-11-20 21:09:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	233K
描述
Small Signal Field-Effect Transistor

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IRF7807VD1TRPBF-1 数据手册

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IRF7807VD1PbF-1

FETKY MOSFET / SCHOTTKY DIODE

V_DS

K/D

A/S

R_{DS(on) max}

(@V_GS= 4.5V)

Q_{g (typical)}

9.5

3.4

A/S

K/D

Q_{SW (typical)}

Q_{OSS (typical)}

I_D

Top View

SO-8

8.3

(@T_A= 25°C)

Applications

l Co-Pack N-channel HEXFET^®POWER MOSFET and Schottky Diode

l Ideal for Synchronous Rectifiers in DC-DC

Features

Benefits

Industry-standard pinout SO-8 Package

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

⇒

MSL1, Industrial qualification

Standard Pack

Form

Tube/Bulk

Tape and Reel

Base Part Number

Package Type

Orderable Part Number

Quantity

4000

IRF7807VD1PbF-1

IRF7807VD1TRPbF-1

IRF7807VD1PbF-1

SO-8

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Max

Units

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Output Current

(V_GS≥ 4.5V)

V_GS

±20

8.3

6.6

25°C

70°C

I_D

Pulsed Drain Current

I_DM

P_D

25°C

70°C

25°C

70°C

2.5

1.6

3.5

2.2

Power Dissipation

Schottky and Body Diode

Average Forward Current

I_F(AV)

Junction & Storage Temperature Range

T_J, T_STG

-55 to 150

°C

Thermal Resistance

Parameter

Symbol

Typ

–––

Max

Units

Maximum Junction-to-Ambient

Maximum Junction-to-Lead

R_θ

°C/W

R_θ

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May 19, 2014

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