Datasheet > IRF7809

IRF7809

更新时间： 2024-09-29 23:58:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	147K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 17A I(D) \| SO

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数据手册

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IRF7809 数据手册

PD - 93812

PD - 93813

IRF7809/IRF7811

Provisional Datasheet

HEXFET^®Chipset for DC-DC Converters

• N-Channel Application-Specific MOSFETs

• Ideal for CPU Core DC-DC Converters

• New CopperStrap^TMInterconnect for Lower

Electrical and Thermal Resistance

• Low Conduction Losses

• Low Switching Losses

• Minimizes Parallel MOSFETs for high

current applications

Description

These new devices employ advanced HEXFET^®Power

MOSFET technology to achieve an unprecedented

balance of on-resistance and gate charge.The reduced

conduction and switching losses make them ideal for

high efficiency DC-DC converters that power the latest

generation of mobile microprocessors.

SO-8

Top View

DEVICE RATINGS

IRF7809

30V

IRF7811

28V

The IRF7809/IRF7811 employs a newCopperStrap^TM

interconnect technology pioneered by International

Rectifier to dramatically improve the electrial & thermal

resistance contribution of the package. The new

CopperStrap SO-8 power MOSFETs are capable of

current ratings over 17A and power dissipation of 3.5W

@ 25°C ambient conditions, thereby reducing the need

for paralleled devices, improving efficiency and

reliability and reducing board space.

V_DS

R_DS

Q_G

7.5 mΩ

77.5 nC

23.9 nC

30 nC

11 mΩ

23 nC

7 nC

(on)

Q_sw

Q_oss

31 nC

Absolute Maximum Ratings

Parameter

Symbol

V_DS

IRF7809

IRF7811

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±12

Continuous Drain or Source T_A= 25°C

I_D

17.6

16.3

100

Current (V_GS≥ 4.5V)

Pulsed Drain Current

Power Dissipation

T_L= 90°C

I_DM

P_D

100

T_A= 25°C

T_L= 90°C

3.5

3.0

Junction & Storage Temperature Range

Continuous Source Current (Body Diode)

Pulsed Source Current

T_J,T_STG

I_S

–55 to 150

°C

2.5

I_SM

Thermal Resistance

Parameter

Max.

Units

°C/W

Maximum Junction-to-Ambient

Maximum Junction-to-Lead

R_θJA

R_θJL

www.irf.com

1/19/00

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