Datasheet > IRF7811AVTRPBF-1

IRF7811AVTRPBF-1

更新时间： 2024-01-11 14:46:14

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
6页	182K
描述
Small Signal Field-Effect Transistor

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中文翻译

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技术参数
数据手册

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IRF7811AVTRPBF-1 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.64
Base Number Matches：	1

IRF7811AVTRPBF-1 数据手册

IRF7811AVPbF-1

HEXFET^®Power MOSFET

V_DS

R_{DS(on) max}

(@V_GS= 4.5V)

Q_{g (typical)}

I_D

10.8

(@T_A= 25°C)

SO-8

Top View

Features

Industry-standard pinout SO-8 Package

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

Benefits

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

⇒

MSL1, Industrial qualification

Standard Pack

Form

Tube/Bulk

Base Part Number

Package Type

Orderable Part Number

Quantity

4000

IRF7811AVPbF-1

IRF7811AVTRPbF-1

IRF7811AVPbF-1

SO-8

Tape and Reel

Absolute Maximum Ratings

Parameter

Symbol

IRF7811AV

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Output Current

(V_GS≥ 4.5V)

V_GS

±20

T_A= 25°C

10.8

T_L= 90°C

11.8

100

Pulsed Drain Current

T_A= 25°C

T_L= 90°C

2.5

3.0

-55 to 150

Power Dissipation

°C

T_J, T

I_S

Junction & Storage Temperature Range

Continuous Source Current (Body Diode)

Pulsed Source Current

STG

2.5

I_SM

Thermal Resistance

Parameter

Symbol

Typ

–––

Max

Units

R_θ

Maximum Junction-to-Ambient

Maximum Junction-to-Lead

°C/W

R_θ

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November 20, 2013

12 3 4 5 6

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