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IRF7823PBF PDF预览

IRF7823PBF

更新时间: 2024-11-20 11:09:27
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体转换器晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
10页 669K
描述
Power MOSFET Selection for Non-Isolated DC/DC Converters

IRF7823PBF 数据手册

 浏览型号IRF7823PBF的Datasheet PDF文件第2页浏览型号IRF7823PBF的Datasheet PDF文件第3页浏览型号IRF7823PBF的Datasheet PDF文件第4页浏览型号IRF7823PBF的Datasheet PDF文件第5页浏览型号IRF7823PBF的Datasheet PDF文件第6页浏览型号IRF7823PBF的Datasheet PDF文件第7页 
PD - 97050  
IRF7823PbF  
HEXFET® Power MOSFET  
Applications  
VDSS  
30V  
RDS(on) max  
Qg  
9.1nC  
l High Frequency Point-of-Load  
Synchronous Buck Converter for  
Applications in Networking &  
Computing Systems  
8.7m @V = 10V  
:
GS  
A
l Optimized for Control FET applications  
A
1
2
3
4
8
S
S
S
G
D
7
D
Benefits  
l Very Low RDS(on) at 4.5V VGS  
l Low Gate Charge  
6
D
5
D
SO-8  
l Fully Characterized Avalanche Voltage  
and Current  
Top View  
l 100% Tested for RG  
Absolute Maximum Ratings  
Parameter  
Max.  
30  
Units  
V
VDS  
Drain-to-Source Voltage  
V
Gate-to-Source Voltage  
± 20  
13  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TA = 25°C  
D
D
@ TA = 70°C  
11  
A
100  
2.5  
1.6  
DM  
Power Dissipation  
P
P
@TA = 25°C  
@TA = 70°C  
W
D
D
Power Dissipation  
Linear Derating Factor  
Operating Junction and  
0.02  
-55 to + 150  
W/°C  
°C  
T
J
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Drain Lead  
Junction-to-Ambient  
Typ.  
–––  
Max.  
20  
Units  
°C/W  
Rθ  
Rθ  
JL  
–––  
50  
JA  
Notes  through are on page 10  
www.irf.com  
1
10/06/05  

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