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IRF7821PBF PDF预览

IRF7821PBF

更新时间: 2024-11-23 04:44:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管PC
页数 文件大小 规格书
10页 286K
描述
HEXFET㈢Power MOSFET

IRF7821PBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, SOP-8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.08
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:329671Samacsys Pin Count:8
Samacsys Part Category:TransistorSamacsys Package Category:Small Outline Packages
Samacsys Footprint Name:SO-8Samacsys Released Date:2017-11-16 08:28:12
Is Samacsys:NBase Number Matches:1

IRF7821PBF 数据手册

 浏览型号IRF7821PBF的Datasheet PDF文件第2页浏览型号IRF7821PBF的Datasheet PDF文件第3页浏览型号IRF7821PBF的Datasheet PDF文件第4页浏览型号IRF7821PBF的Datasheet PDF文件第5页浏览型号IRF7821PBF的Datasheet PDF文件第6页浏览型号IRF7821PBF的Datasheet PDF文件第7页 
PD - 95213A  
IRF7821PbF  
HEXFET® Power MOSFET  
Applications  
VDSS  
30V  
RDS(on) max  
Qg(typ.)  
9.3nC  
l High Frequency Point-of-Load  
Synchronous Buck Converter for  
Applications in Networking &  
9.1mW@VGS= 10V  
Computing Systems.  
l Lead-Free  
A
A
D
1
8
S
Benefits  
l Very Low RDS(on) at 4.5V VGS  
l Low Gate Charge  
l Fully Characterized Avalanche Voltage  
and Current  
2
3
4
7
S
S
D
6
D
5
G
D
SO-8  
Top View  
Absolute Maximum Ratings  
Parameter  
Max.  
30  
Units  
V
VDS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
V
± 20  
13.6  
11  
GS  
I
I
I
@ TA = 25°C  
D
D
@ TA = 70°C  
A
100  
2.5  
DM  
Power Dissipation  
P
P
@TA = 25°C  
@TA = 70°C  
W
D
D
Power Dissipation  
1.6  
Linear Derating Factor  
Operating Junction and  
0.02  
-55 to + 155  
W/°C  
°C  
T
J
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Drain Lead  
Junction-to-Ambient  
Typ.  
–––  
Max.  
20  
Units  
°C/W  
Rθ  
Rθ  
JL  
–––  
50  
JA  
Notes  through are on page 10  
www.irf.com  
1
05/23/07  

IRF7821PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF8714TRPBF INFINEON

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