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IRF8714PBF PDF预览

IRF8714PBF

更新时间: 2024-02-08 14:14:22
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
9页 251K
描述
HEXFET Power MOSFET

IRF8714PBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:LEAD FREE, SOP-8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:1.04
雪崩能效等级(Eas):65 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):14 A
最大漏极电流 (ID):14 A最大漏源导通电阻:0.0087 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2.5 W最大脉冲漏极电流 (IDM):110 A
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF8714PBF 数据手册

 浏览型号IRF8714PBF的Datasheet PDF文件第2页浏览型号IRF8714PBF的Datasheet PDF文件第3页浏览型号IRF8714PBF的Datasheet PDF文件第4页浏览型号IRF8714PBF的Datasheet PDF文件第5页浏览型号IRF8714PBF的Datasheet PDF文件第6页浏览型号IRF8714PBF的Datasheet PDF文件第7页 
PD - 96116  
IRF8714PbF  
Applications  
HEXFET® Power MOSFET  
l
Control MOSFET of Sync-Buck  
Converters used for Notebook  
ProcessorPower  
VDSS  
30V  
RDS(on) max  
Qg  
8.7m @VGS = 10V  
8.1nC  
l Control MOSFET for Isolated DC-DC  
Converters in Networking Systems  
Benefits  
A
A
D
1
2
3
4
8
l VeryLowGateCharge  
l Very Low RDS(on) at 4.5V VGS  
l Ultra-LowGateImpedance  
l FullyCharacterizedAvalancheVoltage  
and Current  
S
S
S
G
7
D
6
D
5
D
SO-8  
l 20V VGS Max. Gate Rating  
l 100% tested for Rg  
l Lead-Free  
Top View  
Description  
The IRF8714PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the  
industry standard SO-8 package. The IRF8714PbF has been optimized for parameters that are  
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction  
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC  
converters that power the latest generation of processors for Notebook and Netcom applications.  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Max.  
30  
Units  
V
VDS  
V
Gate-to-Source Voltage  
± 20  
14  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TA = 25°C  
D
D
@ TA = 70°C  
11  
A
110  
2.5  
1.6  
DM  
P
P
@TA = 25°C  
@TA = 70°C  
Power Dissipation  
Power Dissipation  
W
D
D
Linear Derating Factor  
Operating Junction and  
0.02  
-55 to + 150  
W/°C  
°C  
T
J
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Drain Lead  
Junction-to-Ambient  
Typ.  
–––  
Max.  
20  
Units  
°C/W  
RθJL  
RθJA  
–––  
50  
Notes  through are on page 9  
www.irf.com  
1
08/01/06  

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