Datasheet > IRF8788TR

IRF8788TR

更新时间： 2024-09-29 17:15:19

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	513K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:24A;Vgs(th)(V):±20;漏源导通电阻:2.8mΩ@10V;漏源导通电阻:3.8mΩ@4.5V

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IRF8788TR 数据手册

UMW

IRF8788

30V N-Channel MOSFET

Description

The

IRF8788TR has been

optimized for

parameters that are critical in synchronous

buck

operation

including

to reduce

losses.

make this product ideal for

Rds(on) and

gate charge

and switching

total losses

both

The

conduction

reduced

high efficiency DC-DC converters that power

the latest generation of processors for notebook

and Netcom applications.

Top View

Benefits

Applications

•

Synchronous MOSFET for Notebook

Processor Power

Synchronous Rectifier MOSFET for

Isolated DC-DC Converters

VDS (V)

= 30V

(V_GS=10V)

ID = 24A

RDS(ON)

•

2.8m

＜

Ω(V

=10V)

3.8m

Ω(V

＜

•

=4.5V)

Very Low Gate Charge

Very Low R_DS(on)at 4.5V V_GS

Ultra-Low Gate Impedance

Fully Characterized Avalanche Voltage

and Current

20V V_GSMax. Gate Rating

•

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

±20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

190

2.5

1.6

@T_A= 25°C

@T_A= 70°C

Power Dissipation

Linear Derating Factor

Operating Junction and

0.02

-55 to + 150

W/°C

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

Max.

Units

R_θ

°C/W

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

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