Datasheet > IRF8734

IRF8734

更新时间： 2024-11-24 14:56:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	282K
描述
30V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

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数据手册

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IRF8734 数据手册

PD - 96226

IRF8734PbF

HEXFET^®Power MOSFET

Applications

l Synchronous MOSFET for Notebook

V_DSS

30V

R_DS(on)max

Qg (typ.)

20nC

3.5m @V_GS= 10V

Processor Power

l Synchronous Rectifier MOSFET for

Isolated DC-DC Converters in

Networking Systems

Benefits

l Very Low R_DS(on)at 4.5V V_GS

l Low Gate Charge

l Fully Characterized Avalanche Voltage

and Current

l 100% Tested for R_G

l Lead-Free

SO-8

Top View

Absolute Maximum Ratings

Max.

Parameter

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

± 20

@ T_A= 25°C

@ T_A= 70°C

168

2.5

@T_A= 25°C

@T_A= 70°C

Power Dissipation

W/°C

°C

1.6

Power Dissipation

0.02

Linear Derating Factor

-55 to + 150

Operating Junction and

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

R_θJL

R_θJA

°C/W

–––

Notes through ꢀ are on page 10

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

www.irf.com

2/12/09

12 3 4 5 6 7...11

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