Datasheet > 晶体管 > 功率场效应晶体管> IRF8788TRPBF

IRF8788TRPBF

更新时间： 2024-09-28 11:53:43

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
9页	228K
描述
Synchronous MOSFET for Notebook Processor Power

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数据手册
替代型号

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IRF8788TRPBF 数据手册

PD - 97137A

IRF8788PbF

HEXFET^®Power MOSFET

Applications

Synchronous MOSFET for Notebook

Processor Power

V_DSS

R_DS(on)max

30V 2.8m @V = 10V 44nC

Synchronous Rectifier MOSFET for

Isolated DC-DC Converters

Benefits

Very Low Gate Charge

Very Low R_DS(on)at 4.5V V_GS

Ultra-Low Gate Impedance

Fully Characterized Avalanche Voltage

and Current

20V V_GSMax. Gate Rating

100% tested for Rg

SO-8

Top View

Lead-Free

Description

The IRF8788PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry

standard SO-8 package. The IRF8788PbF has been optimized for parameters that are critical in

synchronous buck operation including Rds(on) and gate charge to reduce both conduction and

switching losses. The reduced total losses make this product ideal for high efficiency DC-DC

converters that power the latest generation of processors for notebook and Netcom applications.

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Max.

Units

V_DS

Gate-to-Source Voltage

±20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

190

2.5

1.6

@T_A= 25°C

@T_A= 70°C

Power Dissipation

Linear Derating Factor

Operating Junction and

0.02

-55 to + 150

W/°C

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

R_θ

°C/W

–––

Notes through ꢀare on page 9

www.irf.com

8/18/08

12 3 4 5 6 7...9

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IRF8788TRPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRF8788PBF	INFINEON	类似代替	HEXFET Power MOSFET

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