是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.76 | 最大漏极电流 (Abs) (ID): | 7.8 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 1 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF8910 | INFINEON |
获取价格 |
HEXFET Power MOSFET |
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IRF8910GPBF | INFINEON |
获取价格 |
Dual SO-8 MOSFET for POL Halogen-Free |
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IRF8910GTRPBF | INFINEON |
获取价格 |
Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and |
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IRF8910PBF | INFINEON |
获取价格 |
HEXFET Power MOSFET |
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IRF8910PBF_08 | INFINEON |
获取价格 |
Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and |
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IRF8910PBF-1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, |
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IRF8910TRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
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IRF8910TRPBF-1 | INFINEON |
获取价格 |
Power Field-Effect Transistor |
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IRF8915 | INFINEON |
获取价格 |
HEXFETPower MOSFET |
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IRF8915PBF | INFINEON |
获取价格 |
HEXFET Power MOSFET |
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