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IRF8852TRPBF PDF预览

IRF8852TRPBF

更新时间: 2024-01-14 10:51:42
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 276K
描述
 Ultra Low On-Resistance

IRF8852TRPBF 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:,Reach Compliance Code:unknown
风险等级:5.76最大漏极电流 (Abs) (ID):7.8 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1 W子类别:FET General Purpose Power
表面贴装:YESBase Number Matches:1

IRF8852TRPBF 数据手册

 浏览型号IRF8852TRPBF的Datasheet PDF文件第2页浏览型号IRF8852TRPBF的Datasheet PDF文件第3页浏览型号IRF8852TRPBF的Datasheet PDF文件第4页浏览型号IRF8852TRPBF的Datasheet PDF文件第5页浏览型号IRF8852TRPBF的Datasheet PDF文件第6页浏览型号IRF8852TRPBF的Datasheet PDF文件第7页 
PD - 96246  
IRF8852PbF  
HEXFET® Power MOSFET  
l Ultra Low On-Resistance  
l Dual N-Channel MOSFET  
l Very Small SOIC Package  
l Low Profile (< 1.1mm)  
l Available in Tape & Reel  
l Lead-Free  
VDSS  
25V  
RDS(on) max  
Id  
11.3m @VGS = 10V  
15.4m @VGS = 4.5V  
7.8A  
6.2A  
Description  
HEXFET® Power MOSFETs from International Rectifier  
utilize advanced processing techniques to achieve  
extremely low on-resistance per silicon area. This benefit,  
combined with the ruggedized device design, that  
International Rectifier is well known for, provides the  
designer with an extremely efficient and reliable  
device for battery and load management.  
TSSOP-8  
The TSSOP-8 package has 45% less footprint area than  
the standard SO-8. This makes the TSSOP-8 an ideal  
device for applications where printed circuit board space is  
at a premium. The low profile (<1.2mm) allows it to fit easily  
into extremely thin environments such as portable  
electronics and PCMCIA cards.  
Absolute Maximum Ratings  
Parameter  
Max.  
25  
Units  
V
VDS  
Drain-to-Source Voltage  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TA = 25°C  
7.8  
D
D
@ TA = 70°C  
6.2  
A
62.4  
1.0  
DM  
Power Dissipation  
P
P
@TA = 25°C  
@TA = 70°C  
D
D
W
Power Dissipation  
0.64  
Linear Derating Factor  
Gate-to-Source Voltage  
0.01  
± 20  
W/°C  
V
V
T
GS  
Operating Junction and  
-55 to + 150  
J
°C  
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Drain Lead  
Junction-to-Ambient  
Typ.  
–––  
Max.  
53  
Units  
RθJL  
RθJA  
°C/W  
–––  
125  
Notes  through are on page 10  
ORDERING INFORMATION:  
See detailed ordering and shipping information on the last page of this data sheet.  
www.irf.com  
1
07/30/09  

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