Datasheet > IRF9130

IRF9130

更新时间： 2024-11-19 22:31:39

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
7页	62K
描述
-12A, -100V, 0.30 Ohm, P-Channel Power MOSFET

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IRF9130 数据手册

IRF9130

Data Sheet

February 1999

File Number 2220.3

-12A, -100V, 0.30 Ohm, P-Channel Power

MOSFET

Features

• -12A, -100V

• r = 0.30Ω

These are P-Channel enhancement mode silicon gate

power ﬁeld effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

speciﬁed level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching

convertors, motor drivers, relay drivers, and drivers for high

power bipolar switching transistors requiring high speed and

low gate drive power. They can be operated directly from

integrated circuits.

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Symbol

Formerly developmental type TA17511.

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRF9130

TO-204AA

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-204AA

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

5-8

12 3 4 5 6 7

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与IRF9130相关器件

型号	品牌	获取价格	描述	数据表
IRF9130_03	SEME-LAB	获取价格	P–CHANNEL POWER MOSFET
IRF9130E	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRF9130EA	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRF9130EAPBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRF9130EB	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRF9130EBPBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRF9130ECPBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRF9130ED	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRF9130EDPBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRF9130EPBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met