Datasheet > IRF9130_03

IRF9130_03

更新时间： 2024-11-20 11:09:31

品牌	Logo	应用领域
SEME-LAB		/
页数	文件大小	规格书
2页	23K
描述
P–CHANNEL POWER MOSFET

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中文翻译

获取价格

数据手册

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IRF9130_03 数据手册

IRF9130

MECHANICAL DATA

Dimensions in mm (inches)

P–CHANNEL

POWER MOSFET

39.95 (1.573)

max.

30.40 (1.197)

30.15 (1.187)

17.15 (0.675)

16.64 (0.655)

V_DSS

–100V

–11A

4.09 (0.161)

3.84 (0.151)

dia.

I_D(cont)

R_DS(on)

2 plcs.

Ω

0.2

FEATURES

20.32 (0.800)

18.80 (0.740)

dia.

• HERMETICALLY SEALED TO–3 METAL

PACKAGE

• SIMPLE DRIVE REQUIREMENTS

• SCREENING OPTIONS AVAILABLE

1.09 (0.043)

0.97 (0.038)

dia.

2 plcs.

TO–3 Metal Package

Pin 1 – Gate

Pin 2 – Source

Case – Drain

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

case

Gate – Source Voltage

Continuous Drain Current

±20V

–11A

(V = 0 , T

= 25°C)

case

(V = 0 , T

= 100°C)

–7.0A

Pulsed Drain Current

–50A

Power Dissipation @ T = 25°C

case

75W

Linear Derating Factor

0.6W/°C

81mJ

Single Pulse Avalanche Energy

Avalanche Current

–11A

Repetitive Avalanche Energy

7.5mJ

dv/dt

T , T

Peak Diode Recovery

–5.5V/ns

–55 to +150°C

300°C

Operating and Storage Temperature Range

Lead Temperature 1.6mm (0.63”) from case for 10 sec.

stg

Notes

1) Repetitive Rating – Pulse width limited by maximum junction temperature.

2) @ V = –25V , L ≥ 1.0mH , R = 25Ω , Peak I = –11A , Starting T = 25°C

3) @ I ≤ –11A , di/dt ≤ –140A/µs , V ≤ BV

, T ≤ 150°C , Suggested R = 7.5Ω

J G

DSS

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

Document Number 5676

Issue 1

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

中文翻译

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与IRF9130_03相关器件

型号	品牌	获取价格	描述	数据表
IRF9130E	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRF9130EA	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRF9130EAPBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRF9130EB	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRF9130EBPBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRF9130ECPBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRF9130ED	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRF9130EDPBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRF9130EPBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRF9130SMD	SEME-LAB	获取价格	P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

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