Datasheet > IRF9130

IRF9130

更新时间： 2024-11-19 22:31:39

品牌	Logo	应用领域
SEME-LAB		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
2页	23K
描述
P-CHANNEL POWER MOSFET

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中文翻译

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数据手册

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IRF9130 数据手册

IRF9130

MECHANICAL DATA

Dimensions in mm (inches)

P–CHANNEL

POWER MOSFET

39.95 (1.573)

max.

30.40 (1.197)

30.15 (1.187)

17.15 (0.675)

16.64 (0.655)

V_DSS

–100V

–11A

0.2

4.09 (0.161)

3.84 (0.151)

dia.

I_D(cont)

R_DS(on)

2 plcs.

FEATURES

• HERMETICALLY SEALED TO–3 METAL

PACKAGE

20.32 (0.800)

18.80 (0.740)

dia.

• SIMPLE DRIVE REQUIREMENTS

• SCREENING OPTIONS AVAILABLE

1.09 (0.043)

0.97 (0.038)

dia.

2 plcs.

TO–3 Metal Package

Pin 1 – Gate

Pin 2 – Source

Case – Drain

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

case

Gate – Source Voltage

Continuous Drain Current

±20V

–11A

(V = 0 , T

= 25°C)

case

(V = 0 , T

= 100°C)

–7.0A

case

Pulsed Drain Current

–50A

Power Dissipation @ T = 25°C

case

75W

Linear Derating Factor

0.6W/°C

81mJ

Single Pulse Avalanche Energy

Avalanche Current

–11A

Repetitive Avalanche Energy

7.5mJ

dv/dt

T , T

Peak Diode Recovery

–5.5V/ns

–55 to +150°C

300°C

Operating and Storage Temperature Range

Lead Temperature 1.6mm (0.63”) from case for 10 sec.

stg

Notes

1) Repetitive Rating – Pulse width limited by maximum junction temperature.

2) @ V = –25V , L 1.0mH , R = 25 , Peak I = –11A , Starting T = 25°C

3) @ I

–11A , di/dt –140A/ s , V

, T

150°C , Suggested R = 7.5

DSS

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim. 10/99

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IRF9130_03	SEME-LAB	获取价格	P–CHANNEL POWER MOSFET
IRF9130E	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRF9130EA	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRF9130EAPBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRF9130EB	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRF9130EBPBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRF9130ECPBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRF9130ED	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRF9130EDPBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRF9130EPBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met