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IRF9140 PDF预览

IRF9140

更新时间: 2024-11-19 22:51:35
品牌 Logo 应用领域
SEME-LAB 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
2页 25K
描述
P-CHANNEL POWER MOSFET

IRF9140 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:TO-204AA
包装说明:FLANGE MOUNT, O-MBFM-P2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.12Is Samacsys:N
雪崩能效等级(Eas):500 mJ外壳连接:DRAIN
配置:SINGLE最小漏源击穿电压:100 V
最大漏极电流 (ID):18 A最大漏源导通电阻:0.23 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-3
JESD-30 代码:O-MBFM-P2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:METAL
封装形状:ROUND封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):72 A认证状态:Not Qualified
表面贴装:NO端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF9140 数据手册

 浏览型号IRF9140的Datasheet PDF文件第2页 
IRF9140  
MECHANICAL DATA  
Dimensions in mm (inches)  
P–CHANNEL  
POWER MOSFET  
39.95 (1.573)  
max.  
30.40 (1.197)  
30.15 (1.187)  
17.15 (0.675)  
16.64 (0.655)  
VDSS  
–100V  
–18A  
ID(cont)  
RDS(on)  
4.09 (0.161)  
3.84 (0.151)  
dia.  
0.2  
2
1
2 plcs.  
FEATURES  
• HERMETICALLY SEALED TO–3 METAL  
PACKAGE  
20.32 (0.800)  
18.80 (0.740)  
dia.  
• SIMPLE DRIVE REQUIREMENTS  
• SCREENING OPTIONS AVAILABLE  
1.09 (0.043)  
0.97 (0.038)  
dia.  
2 plcs.  
TO–3 Metal Package  
Pin 1 – Gate  
Pin 2 – Source  
Case – Drain  
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
case  
V
Gate – Source Voltage  
Continuous Drain Current  
Continuous Drain Current  
±20V  
–18A  
GS  
I
I
I
(V = 0 , T  
= 25°C)  
D
GS  
case  
case  
(V = 0 , T  
= 100°C)  
–11A  
D
GS  
1
Pulsed Drain Current  
–72A  
DM  
P
Power Dissipation @ T = 25°C  
case  
125W  
D
Linear Derating Factor  
1W/°C  
2
E
Single Pulse Avalanche Energy  
500mJ  
–18A  
AS  
AR  
2
I
Avalanche Current  
AR  
2
E
Repetitive Avalanche Energy  
12.5mJ  
–5.5V/ns  
–55 to +150°C  
300°C  
3
dv/dt  
T , T  
Peak Diode Recovery  
Operating and Storage Temperature Range  
Lead Temperature 1.6mm (0.63”) from case for 10 sec.  
J
stg  
T
L
Notes  
1) Pulse Test: Pulse Width 300µs, δ ≤ 2%  
2) @ V = –25V , L 2.3mH , R = 25, Peak I = –18A , Starting T = 25°C  
DD  
G
L
J
3) @ I –18A , di/dt –100A/µs , V BV  
, T 150°C , Suggested R = 9.1Ω  
J G  
SD  
DD  
DSS  
Prelim. 9/96  
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.  

IRF9140 替代型号

型号 品牌 替代类型 描述 数据表
IRF9140 INFINEON

类似代替

TRANSISTORS P-CHANNEL(Vdss=-100V, Rds(on)=0.2ohm, Id=-18A)
IRF9140ED INFINEON

功能相似

Power Field-Effect Transistor, 18A I(D), 100V, 0.23ohm, 1-Element, P-Channel, Silicon, Met
IRF9140EA INFINEON

功能相似

Power Field-Effect Transistor, 18A I(D), 100V, 0.23ohm, 1-Element, P-Channel, Silicon, Met

与IRF9140相关器件

型号 品牌 获取价格 描述 数据表
IRF9140EA INFINEON

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Power Field-Effect Transistor, 18A I(D), 100V, 0.23ohm, 1-Element, P-Channel, Silicon, Met
IRF9140EAPBF INFINEON

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Power Field-Effect Transistor, 18A I(D), 100V, 0.23ohm, 1-Element, P-Channel, Silicon, Met
IRF9140EB INFINEON

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Power Field-Effect Transistor, 18A I(D), 100V, 0.23ohm, 1-Element, P-Channel, Silicon, Met
IRF9140EBPBF INFINEON

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18A, 100V, 0.23ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF9140EC INFINEON

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Power Field-Effect Transistor, 18A I(D), 100V, 0.23ohm, 1-Element, P-Channel, Silicon, Met
IRF9140ECPBF INFINEON

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Power Field-Effect Transistor, 18A I(D), 100V, 0.23ohm, 1-Element, P-Channel, Silicon, Met
IRF9140ED INFINEON

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Power Field-Effect Transistor, 18A I(D), 100V, 0.23ohm, 1-Element, P-Channel, Silicon, Met
IRF9140EDPBF INFINEON

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Power Field-Effect Transistor, 18A I(D), 100V, 0.23ohm, 1-Element, P-Channel, Silicon, Met
IRF9140SCX INFINEON

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-100V Single P-Channel Hi-Rel MOSFET in a TO-204AA package - Screening Level TX
IRF9140SM ETC

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TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 14A I(D) | LLCC