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IRF9140 PDF预览

IRF9140

更新时间: 2024-11-19 22:51:35
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
7页 63K
描述
-19A, -100V, 0.200 Ohm, P-Channel Power MOSFET

IRF9140 数据手册

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IRF9140  
Data Sheet  
February 1999  
File Number 2278.3  
-19A, -100V, 0.200 Ohm, P-Channel Power  
MOSFET  
Features  
• -19A, -100V  
• r = 0.200Ω  
These are P-Channel enhancement mode silicon gate  
power field effect transistors. They are advanced power  
MOSFETs designed, tested, and guaranteed to withstand a  
specified level of energy in the breakdown avalanche mode  
of operation. All of these power MOSFETs are designed for  
applications such as switching regulators, switching  
convertors, motor drivers, relay drivers, and drivers for high  
power bipolar switching transistors requiring high speed and  
low gate drive power. These types can be operated directly  
from integrated circuits.  
DS(ON)  
• Single Pulse Avalanche Energy Rated  
• SOA is Power Dissipation Limited  
• Nanosecond Switching Speeds  
• Linear Transfer Characteristics  
• High Input Impedance  
• Related Literature  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Formerly developmental type TA17521.  
Ordering Information  
Symbol  
PART NUMBER  
PACKAGE  
BRAND  
IRF9140  
D
IRF9140  
TO-204AA  
NOTE: When ordering, include the entire part number.  
G
S
Packaging  
JEDEC TO-204AA  
DRAIN  
(FLANGE)  
SOURCE (PIN 2)  
GATE (PIN 1)  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
5-14  

IRF9140 替代型号

型号 品牌 替代类型 描述 数据表
IRF9140EA INFINEON

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