Datasheet > IRF8915PBF_08

IRF8915PBF_08

更新时间： 2024-11-20 12:30:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	291K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册

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IRF8915PBF_08 数据手册

PD-95727A

IRF8915PbF

HEXFET^®Power MOSFET

Applications

V_DSS

20V

R_DS(on)max

18.3m @V_GS= 10V

I_D

8.9A

Dual SO-8 MOSFET for POL

converters in desktop, servers,

graphics cards, game consoles

and set-top box

l Lead-Free

Benefits

l Ultra-Low Gate Impedance

SO-8

l Very Low R_DS(on)

Top View

l Fully Characterized Avalanche Voltage

and Current

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

8.9

7.1

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

@T_A= 25°C

@T_A= 70°C

Power Dissipation

2.0

1.3

Linear Derating Factor

Operating Junction and

0.016

-55 to + 150

W/°C

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

°C/W

R_θJL

R_θJA

–––

62.5

Notes through ꢀ are on page 10

www.irf.com

07/23/08

12 3 4 5 6 7...10

中文翻译

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