是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | LEAD FREE, SOP-8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 8.44 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 230 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 24 A | 最大漏极电流 (ID): | 24 A |
最大漏源导通电阻: | 0.0028 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 2.5 W |
最大脉冲漏极电流 (IDM): | 190 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRF8788TRPBF | INFINEON |
类似代替 |
Synchronous MOSFET for Notebook Processor Power | |
IRF7832PBF | INFINEON |
类似代替 |
HEXFET Power MOSFET | |
IRF7831PBF | INFINEON |
类似代替 |
HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF8788PBF-1 | INFINEON |
获取价格 |
Power Field-Effect Transistor | |
IRF8788TR | UMW |
获取价格 |
种类:N-Channel;漏源电压(Vdss):30V;持续漏极电流(Id)(在25°C时 | |
IRF8788TRPBF | INFINEON |
获取价格 |
Synchronous MOSFET for Notebook Processor Power | |
IRF8852PBF | INFINEON |
获取价格 |
Ultra Low On-Resistance | |
IRF8852TRPBF | INFINEON |
获取价格 |
Ultra Low On-Resistance | |
IRF8910 | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRF8910GPBF | INFINEON |
获取价格 |
Dual SO-8 MOSFET for POL Halogen-Free | |
IRF8910GTRPBF | INFINEON |
获取价格 |
Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and | |
IRF8910PBF | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRF8910PBF_08 | INFINEON |
获取价格 |
Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and |