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IRF7831PBF PDF预览

IRF7831PBF

更新时间: 2024-01-21 09:33:51
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
10页 265K
描述
HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 3.6mヘ@VGS = 10V , Qg(typ.) = 40nC )

IRF7831PBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT包装说明:SMALL OUTLINE, R-XDSO-G8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.32Is Samacsys:N
雪崩能效等级(Eas):100 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):21 A
最大漏极电流 (ID):21 A最大漏源导通电阻:0.0036 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-XDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2.5 W
最大脉冲漏极电流 (IDM):170 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF7831PBF 数据手册

 浏览型号IRF7831PBF的Datasheet PDF文件第2页浏览型号IRF7831PBF的Datasheet PDF文件第3页浏览型号IRF7831PBF的Datasheet PDF文件第4页浏览型号IRF7831PBF的Datasheet PDF文件第5页浏览型号IRF7831PBF的Datasheet PDF文件第6页浏览型号IRF7831PBF的Datasheet PDF文件第7页 
PD - 95134B  
IRF7831PbF  
HEXFET® Power MOSFET  
Applications  
VDSS  
30V  
RDS(on) max  
Qg (typ.)  
40nC  
l High Frequency Point-of-Load  
Synchronous Buck Converter for  
Applications in Networking &  
Computing Systems.  
3.6m:@VGS = 10V  
A
A
1
8
S
D
Benefits  
2
7
S
D
l Very Low RDS(on) at 4.5V VGS  
l Ultra-Low Gate Impedance  
l Fully Characterized Avalanche Voltage  
and Current  
l 100%TestedforRG  
l Lead-Free  
3
6
S
D
4
5
G
D
SO-8  
Top View  
Absolute Maximum Ratings  
Parameter  
Max.  
30  
Units  
V
VDS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
V
± 12  
21  
GS  
I
I
I
@ TA = 25°C  
D
D
@ TA = 70°C  
17  
A
170  
2.5  
1.6  
DM  
Power Dissipation  
P
P
@TA = 25°C  
@TA = 70°C  
W
D
D
Power Dissipation  
Linear Derating Factor  
Operating Junction and  
0.02  
-55 to + 150  
W/°C  
°C  
T
J
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Drain Lead  
Junction-to-Ambient  
Typ.  
–––  
Max.  
20  
Units  
°C/W  
RθJL  
RθJA  
–––  
50  
Notes  through „ are on page 10  
www.irf.com  
1
6/30/05  

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