Datasheet > IRF7831TR

IRF7831TR

更新时间： 2024-11-20 20:02:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	167K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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数据手册
替代型号

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IRF7831TR 数据手册

PD - 94636

IRF7831

HEXFET^®Power MOSFET

Applications

V_DSS

30V

R_DS(on)max

Qg (typ.)

40nC

l High Frequency Point-of-Load

Synchronous Buck Converter for

Applications in Networking &

Computing Systems.

3.6m @V_GS= 10V

Benefits

l Very Low R_DS(on)at 4.5V V_GS

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

SO-8

Top View

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

± 12

@ T_A= 25°C

@ T_A= 70°C

170

2.5

1.6

Power Dissipation

@T_A= 25°C

@T_A= 70°C

Power Dissipation

Linear Derating Factor

Operating Junction and

0.02

W/°C

°C

-55 to + 150

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

R_θ

°C/W

–––

Notes through are on page 10

www.irf.com

7/9/03

12 3 4 5 6 7...10

中文翻译

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IRF7831TR 替代型号

型号	品牌	替代类型	描述	数据表
IRF7831TRPBF	INFINEON	类似代替	High Frequency Point-of-Load Synchronous Buck Converter

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