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IRF7832 PDF预览

IRF7832

更新时间: 2024-11-19 22:31:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 211K
描述
HEXFET Power MOSFET

IRF7832 数据手册

 浏览型号IRF7832的Datasheet PDF文件第2页浏览型号IRF7832的Datasheet PDF文件第3页浏览型号IRF7832的Datasheet PDF文件第4页浏览型号IRF7832的Datasheet PDF文件第5页浏览型号IRF7832的Datasheet PDF文件第6页浏览型号IRF7832的Datasheet PDF文件第7页 
PD - 94594D  
IRF7832  
HEXFET® Power MOSFET  
Applications  
l Synchronous MOSFET for Notebook  
Processor Power  
l Synchronous Rectifier MOSFET for  
Isolated DC-DC Converters in  
Networking Systems  
VDSS  
RDS(on) max  
Qg  
4.0m @VGS = 10V  
30V  
34nC  
A
A
D
1
2
3
4
8
S
S
S
G
Benefits  
7
D
l Very Low RDS(on) at 4.5V VGS  
l Ultra-Low Gate Impedance  
l Fully Characterized Avalanche Voltage  
and Current  
6
D
5
D
SO-8  
Top View  
l 20V VGS Max. Gate Rating  
Absolute Maximum Ratings  
Parameter  
Max.  
30  
Units  
V
VDS  
Drain-to-Source Voltage  
V
Gate-to-Source Voltage  
± 20  
20  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TA = 25°C  
D
D
@ TA = 70°C  
16  
A
160  
2.5  
DM  
P
P
@TA = 25°C  
@TA = 70°C  
Power Dissipation  
Power Dissipation  
W
D
D
1.6  
Linear Derating Factor  
Operating Junction and  
0.02  
-55 to + 155  
W/°C  
°C  
T
J
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Drain Lead  
Junction-to-Ambient  
Typ.  
–––  
Max.  
20  
Units  
°C/W  
RθJL  
RθJA  
–––  
50  
Notes  through „ are on page 10  
www.irf.com  
1
1/14/04  

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