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IRF7832ZPBF PDF预览

IRF7832ZPBF

更新时间: 2024-11-20 03:08:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 266K
描述
HEXFET Power MOSFET

IRF7832ZPBF 数据手册

 浏览型号IRF7832ZPBF的Datasheet PDF文件第2页浏览型号IRF7832ZPBF的Datasheet PDF文件第3页浏览型号IRF7832ZPBF的Datasheet PDF文件第4页浏览型号IRF7832ZPBF的Datasheet PDF文件第5页浏览型号IRF7832ZPBF的Datasheet PDF文件第6页浏览型号IRF7832ZPBF的Datasheet PDF文件第7页 
PD - 96013A  
IRF7832ZPbF  
HEXFET® Power MOSFET  
Applications  
l Synchronous MOSFET for Notebook  
Processor Power  
l Synchronous Rectifier MOSFET for  
Isolated DC-DC Converters  
VDSS  
30V  
RDS(on) max  
3.8m @VGS = 10V  
Qg  
30nC  
A
A
D
1
2
3
4
8
S
S
S
G
Benefits  
7
D
l Very Low RDS(on) at 4.5V VGS  
l Ultra-Low Gate Impedance  
l Fully Characterized Avalanche Voltage  
and Current  
6
D
5
D
SO-8  
Top View  
l 20V VGS Max. Gate Rating  
l Lead-Free  
l 100% tested for Rg  
Absolute Maximum Ratings  
Parameter  
Max.  
30  
Units  
V
VDS  
Drain-to-Source Voltage  
V
Gate-to-Source Voltage  
± 20  
21  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TA = 25°C  
D
D
@ TA = 70°C  
17  
A
160  
2.5  
1.6  
DM  
P
P
@TA = 25°C  
@TA = 70°C  
Power Dissipation  
Power Dissipation  
W
D
D
Linear Derating Factor  
Operating Junction and  
0.02  
-55 to + 150  
W/°C  
°C  
T
J
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Drain Lead  
Junction-to-Ambient  
Typ.  
–––  
Max.  
20  
Units  
°C/W  
RθJL  
RθJA  
–––  
50  
Notes  through are on page 10  
www.irf.com  
1
06/30/05  

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