Datasheet > IRF7855

IRF7855

更新时间： 2024-11-21 11:15:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	622K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

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IRF7855 数据手册

PD - 97173A

IRF7855PbF

HEXFET^®Power MOSFET

Applications

V_DSS

60V

R_DS(on)max

I_D

12A

l Primary Side Switch in Bridge Topology

in Isolated DC-DC Converters

l Primary Side Switch in Push-Pull

Topology for 18-36Vin Isolated DC-DC

Converters

9.4m @VGS = 10V

l Secondary Side Synchronous

Rectification Switch for 15Vout

l Suitable for 48V Non-Isolated

Synchronous Buck DC-DC Applications

Benefits

l Low Gate to Drain Charge to Reduce

SO-8

Top View

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

V_GS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

@ T = 25°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 70°C

8.7

@T = 25°C

2.5

Maximum Power Dissipation

Linear Derating Factor

0.02

W/°C

dv/dt

Peak Diode Recovery dv/dt

Operating Junction and

9.9

V/ns

°C

-55 to + 150

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient (PCB Mount)

Typ.

–––

Max.

Units

°C/W

R_θ

–––

Notes through are on page 8

www.irf.com

05/17/06

12 3 4 5 6 7...9

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