Datasheet > IRF7853

IRF7853

更新时间： 2024-11-21 14:54:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	217K
描述
100V 单个 N 通道 HEXFET Power MOSFET, 采用无铅 SO-8 封装

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中文翻译

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数据手册

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IRF7853 数据手册

PD - 97069

IRF7853PbF

HEXFET^®Power MOSFET

Applications

l Primary Side Switch in Bridge Topology

in Universal Input (36-75Vin) Isolated

DC-DC Converters

V_DSS

100V

R_DS(on)max

18m:@VGS = 10V

I_D

8.3A

l Primary Side Switch in Push-Pull

Topology for 18-36Vin Isolated DC-DC

Converters

l SecondarySideSynchronous

Rectification Switch for 15Vout

l Suitable for 48V Non-Isolated

Synchronous Buck DC-DC Applications

Benefits

l Low Gate to Drain Charge to Reduce

SO-8

Top View

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Max.

100

± 20

8.3

Units

V_DS

V_GS

Gate-to-Source Voltage

@ T = 25°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 70°C

6.6

@T = 25°C

2.5

Maximum Power Dissipation

Linear Derating Factor

0.02

W/°C

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

dv/dt

5.1

V/ns

°C

-55 to + 150

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Typ.

–––

Max.

Units

°C/W

R_θJL

R_θJA

Junction-to-Ambient (PCB Mount)

–––

Notes through are on page 8

www.irf.com

1/5/06

12 3 4 5 6 7...9

中文翻译

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