IRF7836PBF

更新时间： 2024-11-20 04:44:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
9页	249K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册

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IRF7836PBF 数据手册

PD - 97171

IRF7836PbF

HEXFET^®Power MOSFET

Applications

l Synchronous MOSFET for Notebook

V_DSS

R_DS(on)max

5.7m @V = 10V

30V

18nC

Processor Power

l Synchronous Rectifier MOSFET for

isolated DC-DC Converters in

Networking Systems

Benefits

l Very Low R_DS(on)at 4.5V V_GS

l Low Gate Charge

l Fully Characterized Avalanche Voltage

and Current

SO-8

Top View

l 100% Tested for R_G

l Lead-Free

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

± 20

@ T_A= 25°C

@ T_A= 70°C

130

2.5

Power Dissipation

@T_A= 25°C

@T_A= 70°C

Power Dissipation

1.6

Linear Derating Factor

Operating Junction and

0.02

-55 to + 150

W/°C

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Typ.

–––

Max.

Units

°C/W

Junction-to-Drain Lead

R_θ

Junction-to-Ambient

R_θJA

–––

Notes through ꢀ are on page 9

www.irf.com

01/05/06

12 3 4 5 6 7...9

中文翻译

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