Datasheet > IRF7832Z

IRF7832Z

更新时间： 2024-11-20 04:44:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	266K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册

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IRF7832Z 数据手册

PD - 96975A

IRF7832Z

HEXFET^®Power MOSFET

Applications

l Synchronous MOSFET for Notebook

Processor Power

l Synchronous Rectifier MOSFET for

Isolated DC-DC Converters

V_DSS

30V

R_DS(on)max

3.8m @V_GS= 10V

30nC

Benefits

l Very Low R_DS(on)at 4.5V V_GS

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

SO-8

Top View

l 20V V_GSMax. Gate Rating

l 100% tested for Rg

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

160

2.5

1.6

@T_A= 25°C

@T_A= 70°C

Power Dissipation

Linear Derating Factor

Operating Junction and

0.02

-55 to + 150

W/°C

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

°C/W

R_θJL

R_θJA

–––

Notes through ꢀ are on page 10

www.irf.com

06/30/05

12 3 4 5 6 7...10

中文翻译

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