IRF7902PBF

更新时间： 2024-11-20 03:35:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
10页	262K
描述
HEXFET Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF7902PBF 数据手册

PD - 97194A

IRF7902PbF

HEXFET^®Power MOSFET

Applications

V_DSS

I_D

R_DS(on)max

22.6m @V_GS= 10V

14.4m @V_GS= 10V

l Dual SO-8 MOSFET for POL

Converters in Notebook Computers, Servers,

Graphics Cards, Game Consoles

and Set-Top Box

30V Q1

6.4A

9.7A

Benefits

l Very Low R_DS(on)at 4.5V V_GS

l Low Gate Charge

l Fully Characterized Avalanche Voltage

and Current

l 20V V_GSMax. Gate Rating

l Improved Body Diode Reverse Recovery

l Lead-Free

SO-8

Absolute Maximum Ratings

Parameter

Q1 Max.

Q2 Max.

Units

V_DS

Drain-to-Source Voltage

V_GS

Gate-to-Source Voltage

± 20

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

6.4

5.1

9.7

7.8

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

1.4

2.0

0.9

1.3

Linear Derating Factor

Operating Junction and

Storage Temperature Range

0.011

0.016

W/°C

°C

T_J

-55 to + 150

T_STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Units

Q1 Max.

Q2 Max.

R_θJL

R_θJA

°C/W

62.5

www.irf.com

07/10/06

12 3 4 5 6 7...10

中文翻译

下载PDF

与IRF7902PBF相关器件

型号	品牌	获取价格	描述	数据表
IRF7904PBF	INFINEON	获取价格	Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game C
IRF7904PBF-1	INFINEON	获取价格	Power Field-Effect Transistor,
IRF7904UPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF7905PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF7905PBF_08	INFINEON	获取价格	Dual SO-8 MOSFET for POL Converters in Notebook Computers
IRF7905TRPBF	INFINEON	获取价格	Dual SO-8 MOSFET for POL
IRF7907	INFINEON	获取价格	30V 双 N 通道 HEXFET Power MOSFET, 采用无铅 SO-8 封装
IRF7907PBF	INFINEON	获取价格	HEXFETR Power MOSFET
IRF7907PBF_08	INFINEON	获取价格	Dual SO-8 MOSFET for POL
IRF7907PBF-1	INFINEON	获取价格	Power Field-Effect Transistor