Datasheet > IRF7904PBF

IRF7904PBF

更新时间： 2024-11-16 11:09:27

品牌	Logo	应用领域
英飞凌 - INFINEON		转换器电脑游戏游戏机服务器
页数	文件大小	规格书
10页	258K
描述
Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box

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中文翻译

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数据手册

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IRF7904PBF 数据手册

PD - 96919A

IRF7904PbF

HEXFET^®Power MOSFET

Applications

V_DSS

I_D

R_DS(on)max

l Dual SO-8 MOSFET for POL

Converters in Notebook Computers, Servers,

Graphics Cards, Game Consoles

and Set-Top Box

30V Q1 16.2m @V_GS= 10V 7.6A

Q2 10.8m @V_GS= 10V 11A

Benefits

l Very Low R_DS(on)at 4.5V V_GS

l Low Gate Charge

l Fully Characterized Avalanche Voltage

and Current

l 20V V_GSMax. Gate Rating

l Improved Body Diode Reverse Recovery

l 100% Tested for R_G

l Lead-Free

SO-8

Absolute Maximum Ratings

Parameter

Q1 Max.

Q2 Max.

Units

V_DS

Drain-to-Source Voltage

V_GS

Gate-to-Source Voltage

± 20

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

7.6

6.1

8.9

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

1.4

0.9

2.0

1.3

Linear Derating Factor

0.011

0.016

W/°C

°C

T_J

Operating Junction and

Storage Temperature Range

-55 to + 150

T_STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Q1 Max.

Q2 Max.

Units

R_θ

°C/W

62.5

www.irf.com

02/08/06

12 3 4 5 6 7...10

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