Datasheet > IRF7907PBF_08

IRF7907PBF_08

更新时间： 2022-04-19 15:41:33

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	331K
描述
Dual SO-8 MOSFET for POL

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数据手册

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IRF7907PBF_08 数据手册

PD - 97066A

IRF7907PbF

HEXFET^®Power MOSFET

Applications

V_DSS

I_D

R_DS(on)max

l Dual SO-8 MOSFET for POL

Converters in Notebook Computers, Servers,

Graphics Cards, Game Consoles

and Set-Top Box

30V Q1 16.4m @V_GS= 10V 9.1A

Q2 11.8m @V_GS= 10V 11A

Benefits

l Very Low R_DS(on)at 4.5V V_GS

l Low Gate Charge

l Fully Characterized Avalanche Voltage

and Current

l 20V V_GSMax. Gate Rating

l Improved Body Diode Reverse Recovery

l 100% Tested for R_G

l Lead-Free

SO-8

Absolute Maximum Ratings

Parameter

Q1 Max.

Q2 Max.

Units

V_DS

Drain-to-Source Voltage

V_GS

Gate-to-Source Voltage

± 20

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

9.1

7.3

8.8

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

2.0

1.3

Linear Derating Factor

Operating Junction and

Storage Temperature Range

0.016

W/°C

°C

T_J

-55 to + 150

T_STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Q1 Max.

Q2 Max.

Units

°C/W

R_θJL

R_θJA

62.5

Junction-to-Ambient

www.irf.com

07/09/08

12 3 4 5 6 7...10

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