Datasheet > IRF7862PBF_09

IRF7862PBF_09

更新时间： 2024-11-20 05:39:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	251K
描述
HEXFETPower MOSFET

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中文翻译

获取价格

数据手册

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IRF7862PBF_09 数据手册

PD - 97275B

IRF7862PbF

HEXFET^®Power MOSFET

Applications

l Synchronous MOSFET for Notebook

Processor Power

l Synchronous Rectifier MOSFET for

Isolated DC-DC Converters

V_DSS

30V

R_DS(on)max

3.3m @V_GS= 10V

30nC

Benefits

l Very Low R_DS(on)at 4.5V V_GS

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

SO-8

Top View

l 20V V_GSMax. Gate Rating

l 100% tested for Rg

l Lead-Free

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

170

2.5

1.6

@T_A= 25°C

@T_A= 70°C

Power Dissipation

Linear Derating Factor

Operating Junction and

0.02

-55 to + 150

W/°C

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

R_θJL

R_θJA

°C/W

–––

Notes through ꢀ are on page 9

www.irf.com

06/04/09

12 3 4 5 6 7...9

中文翻译

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