IRF7901D1

更新时间： 2024-11-19 22:31:35

品牌	Logo	应用领域
英飞凌 - INFINEON		肖特基二极管
页数	文件大小	规格书
8页	257K
描述
Dual FETKY⑩ Co-Packaged Dual MOSFET Plus Schottky Diode

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中文翻译

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数据手册
替代型号

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IRF7901D1 数据手册

PD- 93844B

IRF7901D1

• Co-Pack Dual N-channel HEXFET Power MOSFET

and Schottky Diode

Dual FETKY™

• Ideal for Synchronous Buck DC-DC

Converters Up to 5A Peak Output

• Low Conduction Losses

Co-Packaged Dual MOSFET Plus Schottky Diode

Device Ratings (Max.Values)

• Low Switching Losses

• Low Vf Schottky Rectifier

and Schottky

30V

Pwr

Vin

Source

V_DS

R_DS

Q_G

30V

Pwr

Vin

Gate

38 mΩ

10.5 nC

3.8 nC

1.0V

32 mΩ

18.3 nC

9.0 nC

0.52V

(on)

Pwr

Vout

PGND

Gate

Pwr

Vout

SO-8

Q_sw

V_SD

Top View

Description

The FETKY^™family of Co-Pack HEXFET MOSFETs and Schottky diodes offers the designer an innovative,

board space saving solution for switching regulator and power management applications. Advanced

HEXFET MOSFETs combined with low forward drop Schottky results in an extremely efficient device suitable

for a wide variety of portable electronics applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple

die capability making it ideal in a variety of power applications. With these improvements, multiple devices can

be used in an application with dramatically reduced board space. Internal connections enable easier board

layout design with reduced stray inductance.

Absolute Maximum Ratings

Parameter

Symbol

V_DS

IRF7901D1

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Output

Current (V_GS≥ 4.5V)

Pulsed Drain Current

Power Dissipation

±20

6.2

V_GS

T_L= 100°C

I_D

I_DM

P_D

2.0

°C

Junction & Storage Temperature Range

T_J,T_STG

I_SM

–55 to 150

Pulsed Source Current

Thermal Resistance

Parameter

Max.

62.5

Units

°C/W

Maximum Junction-to-Ambient

Maximum Junction-to-Leadꢀ

www.irf.com

R_θJA

R_θJL

9/19/01

12 3 4 5 6 7 8

中文翻译

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IRF7901D1 替代型号

型号	品牌	替代类型	描述	数据表
AO4932	AOS	功能相似	Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

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